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MITSUBISHI SEMICONDUCTORS
M81731FP
HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION M81731FP is high voltage Power MOSFET and IGBT module driver for half bridge applications.
PIN CONFIGURATION (TOP VIEW)
FEATURES FLOATING SUPPLY VOLTAGE ................................. 600V OUTPUT CURRENT ............................................ 3A (typ) UNDERVOLTAGE LOCKOUT BUILT-IN INPUT NOISE FILTER SOP-16 PACKAGE APPLICATIONS MOSFET and IGBT module inverter driver for PDP, HID lamp, refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose.
16
VCC NC IN1 NC NC IN2 NC GND
VB1 HO1 VS1 NC NC VB2 HO2 VS2
1 8
NC:NO CONNECTION
9
Outline:16P2N
BLOCK DIAGRAM
VCC
1 16
VB1
VREG HV LEVEL SHIFT
UV DETECT FILTER RQ INTER LOCK R S
Ponr
15
HO1
IN1
3
VREG/VCC LEVEL SHIFT
FILTER
PULSE GEN
14 11
VS1 VB2
HV LEVEL SHIFT
UV DETECT FILTER RQ INTER LOCK R S
Ponr
10
HO2
IN2
6
VREG/VCC LEVEL SHIFT
FILTER
PULSE GEN
9
VS2
GND
8
Aug. 2009 1
MITSUBISHI SEMICONDUCTORS
M81731FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS (Ta = 25C unless otherwise specified)
Symbol VB VS VBS VOUT VCC VIN PD Kq Rth(j-c) Tj Topr Tstg TL Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage Output Voltage Low Side Fixed Supply Voltage Logic Input Voltage Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Solder heat-proof (reflow) Pb Free IN1 or IN2 Ta = 25C, On Board Ta > 25C, On Board Test conditions VB1 or VB2 VS1 or VS2 VBS1 = VB1-VS1 or VBS2 = VB2-VS2 HO1 or HO2 Ratings -0.5 ~ 624 VB-24 ~ VB+0.5 -0.5 ~ 24 VS-0.5 ~ VB+0.5 -0.5 ~ 24 -0.5 ~ VCC+0.5 1.0 8.0 50 -20 ~ 150* -20 ~ 125 -40 ~ 150 255:10s,max 260 Unit V V V V V V W mW/C C/W C C C C
* Please adjust the VS potentian to 500V or less when the junction temperature (Tj) exceeds 125C.
RECOMMENDED OPERATING CONDITIONS
Limits Symbol VB VS VBS VOUT VCC VIN Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Logic Input Voltage IN1 or IN2 Test conditions VB1 or VB2 VS1 (VB1>10V) or VS2 (VB2>10V) VBS1 = VB1-VS1 or VBS2 = VB2-VS2 HO1 or HO2 Min. VS+10 -5 10 VS 10 0 Typ. -- -- -- -- -- -- Max. VS+20 500 20 VB 20 7 Unit V V V V V V
* For proper operation, the device should be used within the recommended conditions.
THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING)
1.2
Pd (W)
1.0 0.8 0.6 0.4 0.2 0
0
25
50
75
100
125
150
Temparature Ta (C)
Aug. 2009 2
MITSUBISHI SEMICONDUCTORS
M81731FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS (Ta = 25C, VCC = VBS ( = VB-VS) = 15V, unless otherwise specified)
Symbol IFS1 IFS2 IBS1 IBS2 ICC VOH VOL VIH VIL IIH IIL VBSuvr VBSuvh tVBSuv VPonr tPonr(FIL) IOH IOL ROH ROL tdLH tdHL tr tf tdLH tdHL IN(FIL) Parameter Floating Supply Leakage Current Floating Supply Leakage Current VBS1 Standby Current VBS2 Standby Current VCC Standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Reset Voltage VBS Supply UV Hysteresis Voltage VBS Supply UV Filter Time Power-On Reset Voltage Power-On Reset Filter TIme Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On Resistance Output Low Level On Resistance Turn-On Propagation Delay Turn-Off Propagation Delay Turn-On Rise Time Turn-Off Fall Time Delay Matching, High Side and Low Side Turn-On Delay Matching, High Side and Low Side Turn-Off Input Filter Time Test conditions VB1 = VS1 = 600V VB2 = VS2 = 600V IN1 = 0V IN2 = 0V IN1 = IN2 = 0V IO = 0A, HO1, HO2 IO = 0A, HO1, HO2 IN1, IN2 IN1, IN2 VIN = 5V, IN1, IN2 VIN = 0V, IN1, IN2 VBS1, VBS2 VBS1, VBS2 VBS1, VBS2 VBS1, VBS2 VBS1, VBS2 VO = 0V, VIN = 5V, PWD <10s, HO1, HO2 VO = 15V, VIN = 0V, PWD < 10s, HO1, HO2 IO = -200mA, ROH = (VOH-VO) /IO HO1, HO2 IO = 200mA, ROL = VO / IO HO1, HO2 CL = 1000pF between HO1-VS1 or HO2-VS2 CL = 1000pF between HO1-VS1 or HO2-VS2 CL = 1000pF between HO1-VS1 or HO2-VS2 CL = 1000pF between HO1-VS1 or HO2-VS2 |tdLH (HO1) -tdLH (HO2) |tdHL (HO1) -tdHL (HO2) CONVEX PULSE : IN1, IN2 CONCAVE PULSE : IN1, IN2 Limits Min. -- -- -- -- -- 13.8 -- 4.0 -- -- -- 8.0 0.3 -- -- 300 2.0 2.0 -- -- -- -- -- -- -- -- -- -- Typ.* -- -- 0.2 0.2 0.3 14.4 -- -- -- 17 -- 8.9 0.7 7.5 -- -- 3.0 3.0 10 2.5 200 170 25 20 -- -- 90 90 Max. 1.0 1.0 0.5 0.5 0.6 -- 0.1 -- 0.8 40 2 9.8 -- -- 6.0 -- -- -- 20 3.0 280 260 45 35 30 30 -- -- Unit A A mA mA mA V V V V A A V V s V ns A A ns ns ns ns ns ns ns ns
* Typ. is not specified.
Aug. 2009 3
MITSUBISHI SEMICONDUCTORS
M81731FP
HIGH VOLTAGE HALF BRIDGE DRIVER
TIMING REQUIREMENT
IN1 or IN2
50%
50%
tdLH
tr
tdHL
tf
HO1 or HO2
90%
90%
10%
10%
FUNCTION TABLE
IN1 HL HL LH LH X X HL LH IN2 HL LH HL LH HL LH X X VBS1 UV VBS2 UV H H H H L L H H H H H H H H L L HO1 L L H H L L L H HO2 L H L H L H L L HO1=HO2=Low HO2=High HO1=High HO1=HO2=High HO1=Low, VBS1 UV tripped HO2=High, VBS1 UV tripped HO2=Low, VBS2 UV tripped HO1=High, VBS2 UV tripped Behavioral state
Note1 : "L" state of VBS1 UV, VBS2 UV means that UV trip voltage. When input signal(IN1 and IN2) is "H" at the same time, then output signal (Both HO1 and HO2) is "H". 2 : X : LH or HL. 3 : Output signal (HO1, HO2) is triggered by the edge of input signal.
IN1(IN2)
HO1(HO2)
Aug. 2009 4
MITSUBISHI SEMICONDUCTORS
M81731FP
HIGH VOLTAGE HALF BRIDGE DRIVER
TIMING DIAGRAM
VCC
VBS UVTrip VBS1
(VBS2)
VBSuvt
VBS UVReset VBSuvr
VPonrReset
VPonr
IN1 (IN2) tVBSuv tPonr (FIL)
HO1 (HO2)
1. Input/Output Timing HIGH ACTIVE (When input signal is "H", then output signal is "H".) 2. VBS Supply Under Voltage Lockout If VBS supply voltage drops below UV trip voltage (VBSuvt) for VBS supply UV filter time, output signal is shut down. As soon as VBS supply voltage rises over UV reset voltage, output signal HO becomes "H" at following "H" edge of input signal. Note: If the VBS drops below VPON, the filter time will become tPOR (FIL) instead of tVBSuv. 3. Allowable Supply Voltage Transient It is recommended to supply VCC firstly and supply VBS1(VBS2) secondly. When shutting off supply voltage, please shut off VBS1(VBS2) firstly and shut off VCC secondly. When applying VCC and VBS1(VBS2), power supply should be applied slowly. If it rises rapidly, output signal (HO or LO) may be malfunction. Note: If VCC is below its recommended value: 10V, output may not response input signals. Note: Please take enough evaluation in the case of power supply shut down and power supply applying after its shut-down.
Aug. 2009 5
MITSUBISHI SEMICONDUCTORS
M81731FP
HIGH VOLTAGE HALF BRIDGE DRIVER
PACKAGE OUTLINE
16P2N-A
EIAJ Package Code SOP16-P-300-1.27 JEDEC Code Weight(g) 0.2 Lead Material Cu Alloy
Plastic 16pin 300mil SOP
e b2
16
9
HE
E
e1
Recommended Mount Pad Symbol
1 8
F A
G
D
A2
b
A1
x
M
e
y
A A1 A2 b c D E e HE L L1 z Z1 x y b2 e1 I2
c z Z1 Detail G Detail F
Dimension in Millimeters Min Nom Max 2.1 0.2 0 0.1 1.8 0.35 0.4 0.5 0.2 0.25 0.18 10.1 10.2 10.0 5.3 5.4 5.2 1.27 7.8 8.1 7.5 0.6 0.8 0.4 1.25 0.605 0.755 0.25 0.1 0 8 0.76 7.62 1.27
L1
L
I2
Aug. 2009 6

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